/* Process Definition File for Tanner EDA's L-Edit / 3D Tools
 * Exported by L-Edit v8.0 / 3D Tools v1.0
 * Copyright Tanner Research (c) 1998, 1999. All rights reserved.
 */
/* Date: <<INSERT DATE>> */

ProcessInfo = {
    Name  = "MUMPS Mireles2"
    Version  = "4.0"
    Unit  = microns
}
Wafer = {
    MaskName  = substrate
    Thickness  = 5
    WaferID  = w1
    Target  = nitride
    Label  = Wafer
    Comment  = Wafer
    Disable  = FALSE
    Display  = FALSE
}
Deposit = {
    LayerName  = nitride
    Thickness  = 0.6
    Scf  = c
    WaferID  = w1
    Target  = nitride
    Label  = "Deposit Nitride"
    Comment  = "Deposit Nitride"
    Disable  = FALSE
    Display  = FALSE
    DepositType  = CONFORMAL
    Face  = TOP
}
Deposit = {
    Label  = "dep oxide"
    WaferID  = w1
    Thickness  = 0.5
    MaskName  = "Grid Layer"
    Target  = ox1
    LayerName  = "Grid Layer"
    Scf  = c
    Depth  = 0.1
    Undercut  = 0.5
    Angle  = 87
    Disable  = FALSE
    Display  = FALSE
    DepositType  = FILL
    EtchType  = SURFACE
    Face  = TOP
    EtchMask  = INSIDE
}
MechanicalPolish = {
    Label  = pulish
    WaferID  = w1
    MaskName  = "Grid Layer"
    Target  = "Grid Layer"
    LayerName  = "Grid Layer"
    Scf  = c
    Depth  = 0.5
    Undercut  = 0.5
    Angle  = 87
    Disable  = FALSE
    Display  = FALSE
    DepositType  = CONFORMAL
    EtchType  = SURFACE
    Face  = TOP
    EtchMask  = INSIDE
}
Deposit = {
    LayerName  = ox1
    Thickness  = 2
    Scf  = ".5"
    WaferID  = w1
    Target  = ox1
    Label  = "Deposit Ox1"
    Comment  = "Deposit Ox1"
    Disable  = FALSE
    Display  = FALSE
    DepositType  = CONFORMAL
    Face  = TOP
}
Etch = {
    MaskName  = Dimple
    Depth  = 0.75
    Angle  = 87
    Undercut  = 0.5
    WaferID  = w1
    Label  = "Etch Dimple"
    Comment  = "Etch Dimple"
    Disable  = FALSE
    Display  = FALSE
    EtchType  = SURFACE
    Face  = TOP
    EtchMask  = INSIDE
    EtchRemoves  = ox1
}
Etch = {
    MaskName  = Anchor1
    Depth  = 2.5
    Angle  = 87
    Undercut  = 0.5
    WaferID  = w1
    Label  = "Etch Anchor1"
    Comment  = "Etch Anchor1"
    Disable  = FALSE
    Display  = FALSE
    EtchType  = SURFACE
    Face  = TOP
    EtchMask  = INSIDE
    EtchRemoves  = ox1
}
Deposit = {
    LayerName  = Poly1
    Thickness  = 2
    Scf  = c
    WaferID  = w1
    Target  = Poly1
    Label  = "Deposit Poly1"
    Comment  = "Deposit Poly1"
    Disable  = FALSE
    Display  = FALSE
    DepositType  = SNOWFALL
    Face  = TOP
}
Etch = {
    MaskName  = Poly1
    Depth  = 4.5
    Angle  = 87
    Undercut  = 0.5
    WaferID  = w1
    Label  = "Etch Poly1"
    Comment  = "Etch Poly1"
    Disable  = FALSE
    Display  = FALSE
    EtchType  = SURFACE
    Face  = TOP
    EtchMask  = OUTSIDE
    EtchRemoves  = Poly1
}
Etch = {
    Label  = "Etch Poly1"
    WaferID  = w1
    Thickness  = 5
    MaskName  = "Not Poly1"
    Target  = "Grid Layer"
    LayerName  = "Grid Layer"
    Scf  = "4.5"
    Depth  = 4.5
    Undercut  = 0.5
    Angle  = 87
    Disable  = FALSE
    Display  = FALSE
    DepositType  = CONFORMAL
    EtchType  = SURFACE
    Face  = TOP
    EtchMask  = INSIDE
    EtchRemoves  = Poly1
}
Etch = {
    MaskName  = Hole1
    Depth  = 4.5
    Angle  = 87
    Undercut  = 0.5
    WaferID  = w1
    Label  = "Etch Hole1"
    Comment  = "Etch Hole1"
    Disable  = FALSE
    Display  = FALSE
    EtchType  = SURFACE
    Face  = TOP
    EtchMask  = INSIDE
    EtchRemoves  = Poly1
}
Etch = {
    WaferID  = w1
    Label  = "Sacrificial Etch"
    Comment  = "Sacrificial Etch"
    Disable  = FALSE
    Display  = FALSE
    Angle  = 87
    Undercut  = 0.5
    EtchType  = SACRIFICIAL
    Face  = TOP
    EtchRemoves  = ox1
    EtchRemoves  = ox2
}
Etch = {
    Label  = "bulk hole"
    WaferID  = w1
    Thickness  = 5
    MaskName  = "Not Poly0"
    Target  = "Grid Layer"
    LayerName  = "Grid Layer"
    Undercut  = 0.5
    Angle  = 87
    Disable  = FALSE
    Display  = FALSE
    Depth  = "5.7"
    DepositType  = CONFORMAL
    EtchType  = SURFACE
    Face  = BOT
    EtchMask  = INSIDE
    EtchRemoves  = nitride
}
Etch = {
    Label  = "Bulk little poly1 bottom"
    WaferID  = w1
    Thickness  = 5
    MaskName  = Poly1
    Target  = "Grid Layer"
    LayerName  = "Grid Layer"
    Scf  = "5.61"
    Depth  = 5.4
    Undercut  = 0.5
    Angle  = 57.4
    Disable  = FALSE
    Display  = TRUE
    DepositType  = CONFORMAL
    EtchType  = BULK
    Face  = BOT
    EtchMask  = INSIDE
}